This resulted in a decreased do the job purpose and also the formation of a Schottky contact concerning the BrGO and n-form Si substrate. As a consequence of the upper proportion of B-C and B-C3 bonding within the BrGO/Si unit than that inside the rGO/Si, the reduced Schottky barrier height https://www.directivepublications.org/journal-of-applied-nanoscience/